Richardson Electronics Expands Agreement with Nitronex to Include Americas and Asia

Richardson Electronics (NASDAQ:RELL) announced today an expansion of its partnership with Nitronex, of Durham, N.C., to include distribution of Nitronex’s high-performance GaN on Si RF power transistors in the Americas and all of Asia. The agreement will increase Nitronex’s sales and customer support services for its customers in the commercial and broadband wireless infrastructure markets. "We have expanded our partnership with Richardson to provide superior sales support and reduce lead times for our customers in the Americas and throughout Asia. These markets are a critical growth area for Nitronex, and our relationship with Richardson Electronics reflects our commitment to these customers,” said Chris Rauh, VP of Sales and Marketing for Nitronex. "Nitronex is particularly pleased with Richardson’s investment in experienced RF Power application engineers and lab facilities.” Richardson Electronics will support all Nitronex RF products, including its family of 2.5 and 3.5GHz WiMAX products, the NPT25015, NPT35015, NPT35050 and the NPT25100. Nitronex’s family of broadband GaN on Si power transistors, the NPTB00025 and NPTB00050, are also available from Richardson. "We have had a very positive response from our early adopters in Japan, and are very pleased at the expansion of our agreement,” said Chris Marshall, Richardson Electronics’ VP of Wireless and Broadband Communications. "GaN is of great interest to anyone working in RF Power. We have already seen that the combination of GaN performance, competitive pricing based on Nitronex’ silicon substrate technology, and the ability to deliver product now is resulting in immediate demands and rapid sales growth.” For more information about Nitronex GaN on Si technologies and devices available from Richardson Electronics, visit www.rell.com/Nitronex. About Nitronex Specializing in the development and manufacturing of gallium nitride (GaN) RF power devices, Nitronex is the global leader in high-performance GaN on silicon (GaN on Si) RF power transistors for the commercial wireless infrastructure, broadband and military markets. Based on its patented SIGANTIC® process — gallium nitride on silicon technology — Nitronex is at the forefront of commercializing GaN technology for RF applications. The company’s ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry. Nitronex was founded in 1999 by graduates of the wide bandgap program at North Carolina State University and is headquartered in Durham, North Carolina. It holds 19 patents with 19 others pending. About Richardson Electronics, Ltd. Richardson Electronics, Ltd. is a global provider of engineered solutions and electronic components to the RF and wireless communications, industrial power conversion, electron device, and display systems markets. Richardson designs, manufactures and distributes discrete devices, components, and assemblies used in RF and wireless infrastructure, networks, digital broadcasting, defense, and power conversion. More information is available online at http://www.rell.com.