A Deep Technology Analysis and cost Comparison Report on Cutting Edge 3D Nand Memory Chips from Toshiba/Sandisk, Samsung, Sk Hynix and Intel/Micron

DUBLIN, Feb. 25, 2019 /PRNewswire/ -- The "Leading-edge 3D NAND Memory Comparison 2018" report has been added to ResearchAndMarkets.com's offering.

The ever-growing markets for consumer electronics and data centers are accelerating the demand for higher-capacity, reliable storage. This explains the impressive revenue growth in the memory industry from $77 billion to $177 billion between 2016 and 2018.

Manufacturers of flash memory that uses 3D NAND gates find it a challenge to meet this demand for higher storage capacity and reliability while lowering the cost per bit. Each manufacturer therefore implements different techniques. They change the storage type and memory cell design and stack more layers with each generation to increase bit density and reduce die sizes. The technological changes in the cell architecture and modification of the fundamental memory features add complexity to the manufacturing process. However these techniques do lower the cost per gigabyte.

We present a technological and economical comparison of latest generation of 3D NAND flash memory available on the market today from four different manufacturers. These are the 64-layer designs from Toshiba/SanDisk, Samsung and Intel/Micron and the 72-layer 3D NAND by SK Hynix. We base our analysis on full teardowns of the packages and the 3D NAND dies to unveil the technology choices used by the manufacturers. We also identify the different participants in the supply chain. These two activities allow us to simulate the cost of the memory wafers and dies.

The report contains a detailed study of the latest NAND dies. The analysis also features a detailed study of die cross section and processes. The report details the physical analysis, highlighting the cell design and memory storage type. It matches the process description with the applicable patent. The report also includes the manufacturing cost analysis and estimation of the manufacturers gross margin.

Finally, it features an exhaustive comparison between the studied samples, highlighting the similarities and differences and their impact on cost.

Key Topics Covered:

1. Overview/Introduction

2. Executive Summary

• Reverse Costing Methodology
• Analysed Device Comparison

3. Company Profile

• Toshiba/SanDisk/Samsung/SK Hynix/Intel/Micron

4. Technology and Market

• NAND Roadmap
• NAND Revenue

5. Physical Analysis

• Toshiba/SanDisk
• Overview
• Die design
• Cross-section
• Patents
• Samsung
• Overview
• Die design
• Cross-section
• Patents
• SK Hynix
• Overview
• Die design
• Cross-section
• Patents
• Micron/Intel
• Overview
• Die design
• Cross-section
• Patents

6. Manufacturing Process Flow

• Overview
• Wafer Fabrication Unit
• Front-End Process

7. Cost Analysis

• Summary of the Cost Analysis
• Yield Explanations and Hypotheses
• 3D NAND Wafer and Die Cost
• Wafer front-end cost
• Die cost
• Component cost

8. Estimated Price and Gross Margin Analysis

Companies Mentioned

Intel/Micron
SK Hynix
Samsung
Toshiba/SanDisk

For more information about this report visit https://www.researchandmarkets.com/research/7qxqdk/a_deep_technology?w=5

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